Abstract
STSAT-2, the fifth small satellite developed by the Satellite Technology Research Center, will pass through the lower edge of the inner radiation belts. While passing through these belts, the spacecraft is expected to encounter a large number of energetic particles, which have the potential to cause failures of the satellite’s microelectronics systems. The space radiation environment of STSAT-2 is estimated through computer-aided simulations. Ground radiation environment tests for the subsystems and major electrical parts of STSAT-2 were performed by using a Co-60 -ray irradiation facility. Of the major electrical parts, two types of MOSFETs were tested in situ. The causes of changes in the electrical performance are discussed, as are the annealing eects.
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