Simulation and fabrication of thin film bulk acoustic wave resonator**Project supported by the National Natural Science Foundation of China (Nos. 61274119, 61306141, 61335008) and the Natural Science Foundation of Jiangsu Province (No. BK20131099).

Abstract

In this paper, we present the simulation and fabrication of a thin film bulk acoustic resonator (FBAR). In order to improve the accuracy of simulation, an improved Mason model was introduced to design the resonator by taking the coupling effect between electrode and substrate into consideration. The resonators were fabricated by the eight inch CMOS process, and the measurements show that the improved Mason model is more accurate than a simple Mason model. The Qs (Q at series resonance), Qp (Q at parallel resonance), Qmax and kt2 of the FBAR were measured to be 695, 814, 1049, and 7.01% respectively, showing better performance than previous reports.