Abstract

Recently Lamb wave devices have originated as an alternate acoustic device for high‐frequency wireless sensing applications. Their potential for sensing devices, including biomedical diagnostics and environmental monitoring as a wireless and passive device, calls for further analysis of the device with higher sensitivity. ZnO‐based sensor has always been of research interest due to its biocompatibility, sensing abilities, and yet cost‐effectivity. A Lamb wave device based on ZnO/SiO2/Si membrane has been theoretically simulated using finite element analysis method (FEM) to study the higher modes, as higher working frequency leads to higher sensitivity of the device toward sensing applications. Optimized properties are identified and utilized for the fabrication of Lamb wave devices. It is observed that for optimized parameters of ZnO/SiO2/Si Lamb device, higher antisymmetric modes are not only advantageous for high sensitivity applications but also more stable within the given operating conditions. Experimentally obtained results indicate close matching with theoretical results.

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