Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

Abstract

AbstractIn this paper, we will present a Pc1D numerical simulation for heterojunction (HJ) silicon solar cells, and discuss their possibilities and limitations. By means of modeling and numerical computer simulation, the influence of emitter‐layer/intrinsic‐layer/crystalline‐Si heterostructures with different thickness and crystallinity on the solar cell performance is investigated and compared with hot wire chemical vapor deposition (HWCVD) experimental results. A new technique for characterization of n‐type microcrystalline silicon (n‐µc‐Si)/intrinsic amorphous silicon (i‐a‐Si)/crystalline silicon (c‐Si) heterojunction solar cells from Pc1D is developed. Results of numerical modeling as well as experimental data obtained using HWCVD on µc‐Si (n)/a‐Si (i)/c‐Si (p) heterojunction are presented. This work improves the understanding of HJ solar cells to derive arguments for design optimization. Some simulated parameters of solar cells were obtained: the best results for Jsc = 39·4 mA/cm2, Voc = 0·64 V, FF = 83%, and η = 21% have been achieved. After optimizing the deposition parameters of the n‐layer and the H2 pretreatment of solar cell, the single‐side HJ solar cells with Jsc = 34·6 mA/cm2, Voc = 0·615 V, FF = 71%, and an efficiency of 15·2% have been achieved. The double‐side HJ solar cell with Jsc = 34·8 mA/cm2, Voc = 0·645 V, FF = 73%, and an efficiency of 16·4% has been fabricated. Copyright © 2009 John Wiley & Sons, Ltd.