Abstract
A GaN based negative differential conductivity diode utilizing transient ballistic transport effects is proposed and large-signal circuit simulations along with preliminary experimental results are presented. The diode is an n +- n - n + structure and transport is described by an empirical velocity-field relation which is derived directly from femtosecond pulse-probe measurements available in literature and incorporated into the simulations through curve fitting. Efficient THz generation is predicted as a result of ~2.8 peak-to-valley ratio. Pulsed current-voltage characteristics were measured and N -type dependence was observed.
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Schedule a callMore From: International Journal of High Speed Electronics and Systems
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