SIMULATION AND EXPERIMENTAL RESEARCH ON ADHESION ENHANCEMENT BETWEEN DIAMOND FILMS AND WC-Co SUBSTRATES BY EMPLOYING AMORPHOUS SiC INTERLAYER

Abstract

The finite element method (FEM) is employed to analyze the residual stress distribution of bi-layer (a-SiC [Formula: see text] diamond) film system, and the adhesion enhancement mechanism of a-SiC interlayer is further investigated. The influence of a-SiC interlayer on the surface topography of WC-Co substrate is taken into consideration by adopting a 3D surface topography model agreeing with the Atomic Force Microscope (AFM) characterization of a-SiC interlayer. For the sake of comparison, the stress distribution of a diamond film with no interlayer is also simulated. The simulation analysis reveals that the residual stress distribution is much more homogeneous after employing the a-SiC interlayer, which is supposed to be of great importance to the adhesion enhancement of diamond films. Afterwards, the diamond films with and without a-SiC interlayer are fabricated on WC-Co substrates. Raman mapping is carried out to measure the real residual stress distribution of as-fabricated a-SiC diamond films, which is in accordance with the simulation results. Moreover, the a-SiC interlayered diamond film exhibits better adhesion than the diamond film with no interlayer in adhesion evaluation, which can be ascribed to the more homogeneous residual stress distribution and better interfacial bonding after introducing the a-SiC interlayer.