Simulation and experimental qualification of the response of microstrip detectors to ion beams

Abstract

In the framework of the construction of a novel Femtoscope Array for Correlation and Spectroscopy, named FARCOS, aiming at the identification in charge and mass even of particles stopping in the first detection layer, we are performing a thorough characterization of the silicon detector layers in terms of the collection properties as a function of the point of incidence. We have experimental evidence — as previously observed also in the literature for other strip detectors — that interstrip incidence alters the signal shape not only for the trivial effect of charge sharing but also because of induction effects on neighbor strips. In order to clarify this issue we developed a custom simulation suite of the electron-hole transport and signal formation able to properly describe 3-D Coulomb interaction and thermal diffusion in semiconductor detectors. We ran a batch of significant and representative simulations presenting the qualitative correct interpretation and the quantitative validation as proved by the comparison of the simulation results with the experimental data.