Abstract
A novel vertical gallium nitride (GaN) junction field-effect transistor (JFET) is reported in this article. Through the setup of dual lateral heterojunction channels in the body, the current density is high while the p-type gallium nitride growth area can be adjusted to easily achieve enhanced mode. Based on the structure parameter settings in this article, through the device simulation software TCAD, and under the condition of selecting the appropriate p-type GaN growth region, the threshold voltage of the device is 1.1 V, the source output current density can reach 7.2 kA/cm2, the breakdown voltage is about 750 V, and the on-resistance is 0.52 mΩ·cm2. Finally, the test circuit is built, and the switching characteristics of the device proposed in this paper are simulated under the consideration of parasitic inductance.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
