Simulation and design of a high-speed and high-power modified uni-traveling carrier photodiode based on the electric field distribution in the depletion region.

Abstract

A modified uni-traveling carrier photodiode with an electric field control layer is proposed to achieve high-speed and high-power performance at a lower bias voltage. By inserting the 10nm p-type InGaAs electric field control layer between the intrinsic absorption layer and space layer, the electric field distribution in the depleted absorption layer and depleted non-absorption layer can be changed. It is beneficial for reducing power consumption and heat generation, meanwhile suppressing the space-charge effect. Compared with the original structure without the electric field control layer, the 3dB bandwidth of the 20µm diameter novel structure, to the best of our knowledge, is improved by 27.1% to 37.5GHz with a reverse bias of 2V, and the RF output power reaches 23.9dBm at 30GHz. In addition, under 8V bias voltage, the bandwidth reaches 47.3GHz.