Abstract
We analyzed charge carrier concentration distribution and electron spectra of the AlGaAs/In0.22Ga0.78As/GaAs quantum well pHEMT structures using experimental methods (photoluminescence and electrochemical capacitance-voltage profiling) coupled with a numerical simulation. The results of the PL spectra simulation and ECV free charge carrier distributions for the AlGaAs/In0.22Ga0.78As/GaAs pHEMT structures with quantum wells are presented. Based on the results, we suggest optimized heterostructures in order to obtain higher electron localization and occupation of the quantum states. Particularly, the optimization of spacer and donor layers thickness does enlarge the blocking dymanic range (BDR) and decrease trird-order intermodulation that finally leads to better electromagnetic compatibility (EMC) and noise resistance of pHEMT device.
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