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Abstract
The previously reported distorted zeroth-order fringes in a bright-field Tanaka pattern from a dislocated region in silicon have been computer simulated and the experimental and the many-beam calculated patterns agree well. Calculations are carried out for nine distinct cases of edge, screw and 60° dislocations in a silicon crystal. The general usefulness of the distortion of the ZOLZ pattern in determining geometrical properties of a dislocation is discussed.
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Schedule a callMore From: Acta Crystallographica Section A Foundations of Crystallography
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