Abstract
This paper deals with a SIMS analysis and a physical simulation of an anomalous reactive ion etching of poly silicon for understanding the physical environments of the plasma processing. The symmetric perturbation of the plasma cylinder affected the surface migration of iron compounds resulting in symmetrically localized anomalolus etching of poly silicon.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
