Simulation Analysis of Snubber Circuit for SiC MOSFET Inverter

Abstract

SiC MOSFET, as a promising power semiconductor devices, has attracted attention from many laboratories and companies for its super performance in high temperature, high voltage and high frequency applications. To protect the devices from overvoltage induced by parasitic inductance in high frequency applications, snubber circuit is a must. In this paper, simulation of snubber circuit in a high frequency PWM inverter is invested, under different numbers of snubber circuit , parasitic parameters, different kinds of load and whether a SiC SBD exsits. Some useful conclusions are obtained to help design more perfect snubber circuit.