Abstract
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating effect in the following structures of deeply submicron MOSFETs with different configurations of buried oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI structure, UTBB SOI structure, and quasi-SOI structure. It is shown that, for a number of new designs, the maximum temperature in the MOSFET structure is significantly reduced as compared to Тmax of the standard SOI MOSFET structure; it approaches the values typical of standard MOSFETs on bulk silicon.
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