Abstract
ABSTRACTScanning tunneling microscopy (STM) is one of the most successful experimental tools for probing the structure of semiconductor surfaces. However, care must be taken in interpreting the images at the atomistic limit. Often a “naive” interpretation of the STM image can yield an incorrect surface structure. We illustrate this situation via ab initio pseudopotential calculations for the STM image of the (110) GaAs surface. We will compare theoretical STM images to experimental images for the relaxed surface and for a surface with an As vacancy.
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