Abstract
The prospect of developing a silicon laser has long been an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon, and Coulombic interactions. We predict gain greater than 40cm−1 and a threshold current density of 70A∕cm2.
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