Abstract
Most recently low-dose (4E17 ions/cm 2) SIMOX technology has been developed in order to restrain the dislocation density and the production cost. However, in- and out-diffusion of oxygen and internal oxidation (ITOX) phenomena have never been understood during high-temperature annealing process as yet. In this study, we use the sample, which was implanted 18 O + with the dose of 4E17 ions/cm 2 into silicon substrate and then non-oxidizing anneal was done at around 1300 °C. As the results, it was proven that the diffusion of oxygen into thermal oxide layer above 1300 °C was not in agreement with the Deal–Grove theory. The mechanism of oxygen in- and out-diffusion in SIMOX wafer is discussed.
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