SIMS round-robin study of depth profiling of arsenic implants in silicon

Abstract

A round-robin study of arsenic depth profiling was conducted by Japanese SIMS users using arsenic-implanted silicon specimens with doses of 3×10 14 to 3×10 16 ions/cm 2. The peak concentration of the implanted arsenic was about 11 at.% for the specimen with the dose of 3×10 16 ions/cm 2. The shape of arsenic ion (AsSi − and As −) profiles was not affected by the incident angle of Cs + primary ion. The RSFs calculated from AsSi −/Si 2 − and As −/Si − by point-by-point normalization were constant against arsenic doses. No dependence of RSFs on the angle of primary ion incidence was observed. Using an AsSi −/Si 2 − or As −/Si − point-by-point calibration method, arsenic with high concentration (11 at.%) in silicon can be quantitatively evaluated without being interfered by its matrix effect.