Abstract
LaAlO 3 is a popular single crystal substrate for epitaxial growth of YBa 2Cu 3O 7−δ (YBaCuO) high- T c films. This research concerns the study of both irradiation and annealing of LaAlO 3 (100) single crystal using SIMS, RBS, and ion channeling. It has been found that irradiation by 50 keV 1 × 10 16 2H +/cm 2 induces a lightly damaged region in LaAlO 3 to a depth of ∼0.8 μm. Rapid thermal annealing (RTA) at 870°C results in the annealing of most of the implant damage near the end of range, and the restoration of a “perfect” crystal near the surface. Whereas denser cascade collision induced by irradiation with the heavier O ions (200 keV 5 × 10 16 18O +/cm 2) amorphises the material and RTA at 870°C causes crystal regrow to the surface but leaves significant crystal damage both at the end of the range and near the surface. The as-implanted 2H and 18O concentration distributions were obtained with an Atomika 6500 SIMS instrument using 10 keV Cs + primary beam and compared with the simulated distributions by TRIM-92. The diffusivities of hydrogen and oxygen in the irradiated LaAlO 3 are also reported.
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