Abstract
We incorporated a Si drift X‐ray detector into a Cameca ims‐6f ion microprobe to perform a nondestructive energy‐dispersive X‐ray spectrometric analysis inside the SIMS instrument. Using thick AlxGa1−xN epitaxial layers and thin SixGe1−x films as examples, we demonstrate that integration of the EDX method (device) with the SIMS technique (instrument) can be extremely efficient for the quantitative analysis of complex materials. Copyright © 2012 John Wiley & Sons, Ltd.
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