Abstract
We have performed secondary ion mass spectrometry depth profiling analysis of III–V based hetero-structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to −150 °C. The depth profiling of ‘frozen’ samples can be a good alternative to sample rotation and oxygen flooding used for ultra-low-energy depth profiling of compound semiconductors. Copyright © 2016 John Wiley & Sons, Ltd.
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