SIMS depth profiling of boron ultra shallow junctions using oblique O 2+ beams down to 150 eV

Abstract

An epitaxial Si grown multi-layer stack consisting of boron delta-doped layers separated by 6.4 nm thick undoped films has been profiled using a Cameca IMS Wf magnetic SIMS. Using low energy oblique O 2 + beam, the boron depth resolution is improved from 1.66 nm/decade at 500 eV down to 0.83 nm/decade at 150 eV. At very low impact energy O 2 + bombardment induces a near full oxidation of silicon and oxygen flooding is then no more needed in the analytical chamber to get a smooth sputtering of silicon at 45° incidence angle.