Abstract
Abstract A practical exhibition of the consequences of the 3D IC in heat management by adding the fin and heat spreaders to thermal through silicon via (TTSV) and IC respectively is proposed in this paper. Thermal cooling and its distribution of burnt potentials at various conditions are the different possessions which can be simulated using FEM simulator. This paper illustrate materials like Silicon nitride (Si3N4), Aluminium oxide (Al2O3), Silicon dioxide (SiO2) as they have the high thermal conductivity and high temperature capabilities which leads to the thermal management in the 3D IC design. Currently, semiconductor industries has cognizance of the metrics such as low density, high thermal strength, good facture of toughness, excellent wear resistance of Silicon nitride and it also shows better capabilities of high temperature, oxidation resistance and high retention strength compared to other metals. Besides silicon nitride has good resistance to thermal shock due to low coefficient of thermal expansion. Aluminium oxide is known for an better electrical insulator but has high thermal conductivity and which can be utilized as the substrate for integrated circuits. The high temperature furnace insulations and electrical insulations are designed by using the aluminium oxides as it has high boiling points and melting points. This makes the rapid use of alumina films in manufacture of IC industry. The other uses of alumina films include spark plug insulators, micro-electric substrates and insulating heat sinks. Silicon dioxide has the properties which helps to use them as the insulator material in IC technology as it has high thermal stability and making it useful for device integration and has high dielectric strength and thermal expansion coefficient is very low and in this paper we have taken these three materials and these materials have been implemented in our model and advertence the outcomes that which material is working efficiently and preciously.
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