Abstract
This paper presents a novel, efficient, and simple method to characterize the transfer function (TF) of leads for active implantable medical devices. The method characterizes the TF using a set of base functions and can be obtained using a few voltage measurements. This procedure requires a few direct measurements of the radiofrequency (RF)-induced voltages on the leads during magnetic resonance imaging (MRI) exposure, and the simulated, or measured, electric field generated by MRI RF coil inside the American Society for Testing and Materials (ASTM) phantom. Consequently, the measurement time of the TF can be reduced and the overall process significantly simplified compared to existing TF measurement methods. The theory of the new method is presented and two examples are given to demonstrate the accuracy and efficiency.
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