Abstract
Many next generation lithography schemes for the semiconductor industry are based on a 13.5 nm tin plasma light source, where hundreds of thousands of 4d-4f, 4p-4d, and 4d-5p transitions from Sn5+–Sn13+ ions overlap to form an unresolved transition array. To aid computation, transition arrays are treated statistically, and Hartree–Fock results are used to calculate radiation transport in the optically thick regime with a one-dimensional Lagrangian plasma hydrodynamics code. Time-dependent spectra and conversion efficiencies of 2% in-band 13.5 nm emission to laser energy are predicted for a Nd:YAG (yttrium aluminum garnet) laser incident on a pure tin slab target as a function of laser power density and pulse duration at normal incidence. Calculated results showed a maximum conversion efficiency of 2.3% for a 10 ns pulse duration at 8.0×1010 W/cm2 and are compared to experimental data where available. Evidence for the need to include lateral expansion is presented.
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