Abstract

A simplified nonlinear model is proposed for intermodulation (IM) analysis of MESFET gate mixers. The accuracy of the model has been verified experimentally using two different MESFET mixers at X-band. Both tests show excellent agreement between measurement and simulated data for second- and third-order IM performance. The simplified model is based on modeling the derivative of the device transconductance by the sum of a Gaussian function and a linear function of the gate voltage. Drain bias dependence is ignored. The advantage of this model is that the fitting parameters can be easily determined from a nonlinear characterization of the device at low frequencies. >

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