Abstract
Extreme ultraviolet lithography schemes for the semiconductor industry are currently based on coupling radiation from a plasma source into a 2% bandwidth at 13.5nm (91.8eV). In this paper, we consider the case for a laser-produced plasma (LPP) and address the calculation of ionic level populations in the 4p64dN, 4p64dN−14f1, 4p54dN+1, and 4p64dN−15p1 configurations in a range of tin ions (Sn6+ to Sn13+) producing radiation in this bandwidth. The LPP is modeled using a one-dimensional hydrodynamics code, which uses a hydrogenic, average atom model, where the level populations are treated as l degenerate. Hartree-Fock calculations are used to remove the l degeneracy and an energy functional method to calculate the nl level populations involved in n=4−4 transitions as a function of distance from the target surface and time. Detailed data are presented for the tin ions that contribute to in-band emission.
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