Abstract
AbstractWe recently developed a simplified bond‐hyperpolarizability model (SBHM) to describe the variation of second‐ and fourth‐harmonic‐generation (SHG, FHG) intensities as a function of sample azimuth angle, and applied it to various Si‐dielectric interfaces. The approach provides an efficient representation of these data with fewer parameters than required by Fourier or tensorial representations. In addition, these parameters have a direct physical meaning in microscopic terms. The model is simple enough to allow analytic expressions to be obtained for SHG and FHG intensities for (001) and (111) interfaces. SHG absorption is shown to result in easily recognized features in anisotropy data. Relative amplitudes of FHG intensities of the (001)Si–SiO2 interface among the three nonvanishing polarization combinations are shown to be consistent to a factor of about 2. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
