Simple theoretical analysis of the thermoelectric power under strong magnetic quantization in superlattices of non-parabolic semiconductors with graded interfaces

Abstract

I have study in this paper to present a simple theoretical analysis of the thermo electric power under strong magnetic quantization (TPM) in superlattices with graded interfaces and compare the same with that of the constituent materials by formulating the respective dispersion laws. It has been observed, taking GaAs/Ga1-xAlxAs, CdS/CdTe, PbTe/PbSnTe, InAs/GaSb and HgTe/CdTe with graded interfaces as examples, that the TPM exhibits oscillatory dependence with the inverse quantizing magnetic field due to the SdH and allied superlattices effects and increases with increasing inverse electron concentration in an oscillatory manner in all the cases. The nature of oscillation is totally band structure dependent and the width of the finite interface enhances the numerical values of the TPM for all the aforementioned superlattices. The numerical values of the TPM in graded superlattices are greater than that of the constituent materials. In addition, the well-known expressions for the bulk specimens of wide-gap materials have also been obtained as special cases of our generalized analysis under certain limiting conditions.