Abstract

This article deals with the extension of the small-signal model usage to GaN technologies benchmarking, and to the detection of internal oscillations occurring in highly optimized multi-finger GaN high-electron-mobility transistors (HEMTs). The proposed small-signal model consists of only 14 circuit elements. Its simple semi-analytical extraction procedure is developed in Keysight ADS circuit simulator, letting instantaneous comparison between modelled and simulated small-signal parameters. The simplicity and the adaptability of the technique always ensures a physical model parameter extraction. The technique is demonstrated for various technology processes, layouts, dimensions, and for three commercially available GaN vendors. The extracted data and the number of circuit elements are used to benchmark GaN technologies in terms of bias dependency, efficiency, and static linearity. By coupling the small-signal model to the electromagnetic (EM) GaN HEMT layout simulation results in a powerful tool for detecting odd-mode and even-mode instabilities. The technique is proven for various GaN basic cells as well as for power bars. Even prior to structure fabrication, the tool can be used to analyze its stability behavior by exploring its layout.

Highlights

  • The small-signal model is of great importance for technology process, and for device and application developers

  • High peak-to-average power ratio (PAPR) signals are needed to transfer high-volume data, driving power amplifiers to operate at high output back-off (OBO) with optimum efficiency and yet linearizable using a digital pre-distortion (DPD) system

  • Its simple semi-analytical extraction procedure was successfully applied for various technology processes and structure geometries

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Summary

Introduction

The small-signal model is of great importance for technology process, and for device and application developers. Developing useful, practical, and reliable small-signal models along with their extraction methods are of great importance for GaN HEMT designers. Ammar Issaoun and Thomas Roedle: Simple Small-Signal HEMT Model Suitable for GaN Stability Analysis and Technologies Benchmarking generalized robust and reliable small-signal extraction procedure is not a simple task. The outline of the stability analysis method for a basic HEMT cell was presented in [7], without any detail about the associated small-signal approach neither about the EM simulation settings. Both EM and small-signal models are detailed, and the stability technique is further demonstrated for a complex power bar structure

Device Structure
Extraction Procedure
Technology Benchmarking
Stability Analysis
Conclusion

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