Abstract
SiC@SiO2 nanofiber material holds great potential for a wide range of applications in microelectronic devices and electromagnetic wave absorption. However, its development has been hindered by high energy consumption (＞1500 °C) and complex fabrication methods. This work introduces a sample approach to produce the SiC@SiO2 nanofiber at temperature of ∼1000 °C by using microwave heating. The SiC@SiO2 nanofiber possess a unique bead-like structure, which are composed of single-crystalline SiC nanowires and amorphous SiO2 beads. The growth mechanism under the action of microwave was explained. Moreover, the SiC@SiO2 nanofiber exhibits an Excellent electromagnetic wave absorption performance with a minimum refection loss (RLmin) value of −36.54 dB. The successful preparation of SiC@SiO2 nanofiber provides a new idea for preparing ceramic materials with low cost and high efficiency in the future.
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