Abstract
A simple analytical method is presented to perform a power-loss analysis of high-efficiency silicon Interdigitated Back Contact (IBC) solar cells. The method assumes one-dimensional current flows for both minority and majority carriers, as well as a constant gradient (or linear profile) of minority carrier concentration from the front to the back of the solar cell. The power-loss analysis method is applied to a real IBC silicon solar cell with a conversion efficiency of 23.3%.
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