Abstract
We analyze high-order harmonic generation (HHG) in a disordered semiconductor within the context of the Anderson model of disorder. Employing the theoretical methods pioneered for the study of disordered metals, we show that disorder is a source of ultrafast dephasing of the HHG signal in semiconductors. Furthermore, it is shown that the dephasing effect induced by disorder on HHG spectra depends on both strength and correlation length of the disorder and very weakly on the frequency and intensity of the laser. Our results suggest that HHG has the potential to be a new spectroscopic tool for the analysis of disordered solids.
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