Abstract

In general, solar cells properties were measured under standardized environment. Recent method uses a Solar Simulator or Sun Simulator to measure a solar cell characteristic by the condition of 1000 W/m2 irradiance and 25°C temperature. However, solar simulator is expensive, therefore in this paper we propose a simple I-V characterization method with microcontroller, potentiometer, and sensors to measure I-V characterization of solar cell. Our method used a microcontroller to record any detected current and voltage from sensors generated by the solar cell driven by halogen light on low power poly-Si solar cell. This method is limited by the sensor rated voltage and current, thus a higher power solar cell is possible to be measured with a higher rated voltage and a current sensor for the future development. The measured Voc and Isc of 3 Wp poly-Si solar cell have 1.94% difference in Voc and 49.1% difference in Isc against the standardized environment. This method is able to characterize a low power solar cell with slight difference on Voc and about half value of Isc compared to standardized I-V curve characterization due to the limitation of halogen lamp spectral irradiance.

Highlights

  • Indonesia has a potential of 4.8 kWh/m2 solar energy [1] and electrical energy has become an irreplaceable part of mankind life

  • The parallel resistance is caused by the presence of crystal defects

  • As this study focuses on low power solar cell and low-cost operation, spatial uniformness is neglected

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Summary

Introduction

Indonesia has a potential of 4.8 kWh/m2 solar energy [1] and electrical energy has become an irreplaceable part of mankind life. Solar cells provide a way to transform solar energy into electrical energy. Solar cell is a device that converts light into electric energy. The conversion is accomplished by absorbing photonic energy and ionizing crystal atoms creating free electrons and hole [2]. The series resistance consists of semiconductor material resistance, contact resistance between metallic contact and semiconductor, wires and terminal connections. The parallel resistance is caused by the presence of crystal defects

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