Simple method for fabrication of diamond nanowires by inductively coupled plasma reactive ion etching

Abstract

Diamond nanowires are fabricated on a bulk, single crystalline diamond near an edge of aluminum coating using inductively coupled plasma reactive ion etching. Two different density areas are simultaneously appeared where the dense area has 9 times higher density than that of the sparse area while keeping the size of nanowires almost uniform in these areas. The nanowire sizes realized in the dense (sparse) area are 858 ± 22 nm (876 ± 25 nm) in height and 126 ± 6 nm (124 ± 7 nm) in diameter, which is suitable for applications in optical quantum information processing.