Abstract

A low-cost and easy-process scheme for solution-processed organic light-emitting devices (OLEDs) was provided to overcome the flaws of poly(styrene sulfonic acid)-doped poly(3,4-ethylenedioxythiphene) (PEDOT:PSS) together with the indium tin oxide anode. The modified PEDOT:PSS with higher work function (5.66 eV) and more efficient hole injecting ability was obtained by simply mixing the aqueous PEDOT:PSS with InCl3 and then consecutive ultraviolet-ozone treatment. The simply structured and solution-processed OLEDs with our modified PEDOT:PSS achieved avery high external quantum efficiency of 21.0% using a classic thermally activated delayed fluorescence emitter, 2,4,5,6-tetrakis(carbazol-9-yl)-1,3-dicyanobenzene. The origin of this great promotion was explored through photoelectron spectroscopy, Fourier transform infrared reflection spectroscopy, and atomic force microscopy, from which we inferred that InCl3 itself, the losing of insulting PSS outer shell, and transformation to quinoid structure of PEDOT chains accounted for this improvement. Our modification method of PEDOT:PSS is beneficial for promoting solution-processed organic semiconducting devices.

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