Abstract
Requirements for a new semiconductor grade material to replace silicon-on-sapphire have surfaced over the past few years. A number of alternate materials have been produced, the most promising of which is SIMOX: Separation by IMplantation of OXygen. Characteristics of this sandwich-like substrate formed by high dose implantation of oxygen ions are described. In particular,the methodology is reviewed of producing a high quality silicon surface layer, an insulating silicon dioxide subsurface layer, and its interface with the bulk silicon. A 100 mA (nominal) oxygen implanter meets the immediate need for this material, and a steady supply of SIMOX wafers is now available. Design criteria for higher volume machines are considered.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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