Abstract
The nucleation and epitaxial films of ZnO on Si substrates were investigated by metal-organic chemical vapor deposition( MOCVD). As is known to all,the morphology and crystalline quality of ZnO are determined by both the nucleation and epitaxy process. In this paper,the effect of temperature on the growth of ZnO films by MOCVD was investigated in terms of these two processes separately. It is found that the temperature has a great influence on the nucleation process and the following epitaxial growth. Because high temperature has suppression on the lateral growth of ZnO nanorods,the diameters of nanorods don't increase with the ZnO nucleus. As a result,the ZnO nanorods with the largest diameter and lowest density were obtained at 560 ℃. In addition,the crystalline quality of ZnO thin films was further improved by modifying nucleation temperature.
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