Abstract
We compare the effects of temperature and parallel magnetic field on the two-dimensional metallic behavior within the unified model of temperature and field dependent effective disorder arising from the screened charged impurity scattering. We find, consistent with experimental observations, that the temperature and field dependence of resistivity should be qualitatively similar in $n\text{\ensuremath{-}}\mathrm{Si}$ MOSFETs and different in $n$-type GaAs two-dimensional (2D) systems, with the $p$-type 2D GaAs system being somewhat intermediate. Based on our calculated results we critically comment on the expected similarities and differences between temperature and field dependent carrier transport properties in various dilute 2D semiconductor systems.
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