Abstract
Ag-TCNQ nanostructures are synthesized by using both solution reaction in acetonitrile and a novel vacuum vapor reaction method. Experiments show the latter synthesis method can produce Ag-TCNQ nanowires with high quality. They have diameters around 100 nm and lengths around 5 /spl mu/m. These nanowires could be potential building blocks for nanoscale electronics. Nanodevices based on these nanowires are fabricated using electron beam lithography technique. Electrical properties are characterized and I-V hysteresis is observed reproducibly, which shows memory effect with electrical switching of four orders on-off ratio. Ag-TCNQ nanowires' electrical properties make them promising candidates for future applications as ultra-high density information storage media.
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