Abstract
Fuse type write-once-read-many (WORM) memories are fabricated based on silver nanowire (AgNW) meshes using simple dispensing and bar-coating processes without needing precise patterning. Compared to previous work, the AgNW mesh WORM memories can be programmed at lower voltage (2.3 V) and current (<10 mA), and thus through near field communication by smart phones. The devices present stable “unwritten” and “written” states for reading operations of 6000 times. Finally, 4-bit WORM memories are fabricated and attached on a packaging box with programming and reading operations by a smart phone to verify its potential for practical applications.
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