Silver Nanoparticles in Comparison with Ionic Liquid and rGO as Gate Dopant for Paper–Pencil-Based Flexible Field-Effect Transistors

Abstract

Nanoparticle-based flexible field-effect transistors (FETs) containing carbon nanotubes (CNTs) and silicon nanowires (SiNWs) have attracted tremendous attention, since their interesting device performance can be utilized for integrated nanoscale electronics. However, use of CNTs and SiNWs on polymer substrates poses serious limitations in terms of their fabrication procedure, repeatability, and biodegradability. In this article, we report for the first time the fabrication and characteristics of solution-processed FETs on a paper substrate doped with easily prepared silver nanoparticles (AgNPs). To compare the FET performance, we fabricated two other FETs on paper containing ionic liquid (IL, 1-butyl-3-methylimidazolium octyl sulfate) and reduced graphene oxide (rGO) as dopants. We observe that the AgNP-based dopant generated good FET characteristics in terms of linear transconductance variations and higher carrier concentration values, showing negligible changes after bending and aging. In comparison with the AgNP-FET, the rGO- and IL-based dopants yielded high carrier mobilities, but the rGO-based FET is more susceptible to aging and bending. The excellent linearity of the I DS–V G curve found for the AgNP-FET ensures its applicability for devices requiring linear transfer characteristics such as linear amplifiers.