Abstract
Herein, the electrical and structural properties of Ag‐ and AgH‐related defects in n‐ and p‐type Si are reinvestigated using conventional deep‐level transient spectroscopy (DLTS) and high‐resolution Laplace DLTS. It is evidenced that a peak corresponding to substitutional Ag does not always appear in as‐grown Si and additional heat treatments are necessary to observe this defect. Several AgH‐related peaks, which were not previously reported in the literature, are observed in hydrogenated n‐ and p‐type Si. The electrical properties of these defects are determined and their origin is discussed. By using high‐resolution Laplace DLTS, the depth profiles of AgH‐related defects previously assigned to AgSH and AgSH2 are analyzed, and their assignments are questioned.
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