Si<inf>3</inf>N<inf>4</inf> based non-volatile memory structures with embedded Si and Ge nanocrystals

Abstract

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si 3 N 4 control and SiO 2 tunnel layers. It was obtained that a properly located layer of Si or Ge nanocrystals can improve both the charging and rettntion behaviour of the MNOS structures simultaneously. Memory window width of about 6.6 V and retention time of 41 years has been achieved for charging pulses of ±15 V, 10 m.s.