Abstract
Photoelectric properties of monocrystalline silicon with multiply charged nanoclusters are studied that generate “silicon clusters,” i.e., nano-sized graded band gap structures. Multiply charged nanoclusters of manganese atoms strongly influence the photoelectric properties of monocrystalline silicon and expand the range of spectral sensitivity up to 8 μm; the photoelectric sensitivity reaches ∼109. Conditions occur for the emergence of photo-emf in such a material in the infrared region when hν< E g . The obtained experimental data expand the functional capabilities for the application of silicon with multiply charged impurity atoms.
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