Abstract
AbstractWe demonstrate straight and bent silicon waveguide junctions using the junction offsets.More than 20% reduction (about 0.02 dB) of the junction connection losses are obtained for the junction using 25 nm offset with bent radii 1.5 μm, compared with the junction without the offset. We also show that the performance of the silicon waveguide racetrack resonators can be improved by introducing a lateral offset at the straight‐to‐bent waveguide junctions. About 0.5 dB increase in drop power is observed for the racetrack resonators with junction offset. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:1470–1471, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26836
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
