Abstract
Chemomechanical mirror polishing damages in a subsurface of silicon wafers have been revealed by photoconductivity amplitude with blue-laser/microwave photoconductivity technique and also revealed by photoconductivity technique and also revealed by photoconductivity amplitude and initial carrier lifetime with UV/millimeter photoconductivity decay technique. These noncontact techniques also have revealed subsurface damages as to be drastically influential on gate- oxide layer breakdown in MOSFET.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
