Silicon vacancy color center photoluminescence enhancement in nanodiamond particles by isolated substitutional nitrogen on {100} surfaces.

Abstract

Fluorescent nanodiamonds were produced by incorporation of silicon-vacancy (Si-V) defect centers in as-received diamonds of averaged size ∼255 nm using microwave plasma chemical vapor deposition. The potential for further enhancement of Si-V emission in nanodiamonds (NDs) is demonstrated through controlled nitrogen doping by adding varying amounts of N(2) in a H(2) + CH(4) feedgas mixture. Nitrogen doping promoted strong narrow-band (FWHM ∼ 10 nm) emission from the Si-V defects in NDs, as confirmed by room temperature photoluminescence. At low levels, isolated substitutional nitrogen in {100} growth sectors is believed to act as a donor to increase the population of optically active (Si-V)(-) at the expense of optically inactive Si-V defects, thus increasing the observed luminescence from this center. At higher levels, clustered nitrogen leads to deterioration of diamond quality with twinning and increased surface roughness primarily on {111} faces, leading to a quenching of the Si-V luminescence. Enhancement of the Si-V defect through controlled nitrogen doping offers a viable alternative to nitrogen-vacancy defects in biolabeling/sensing applications involving sub-10 nm diamonds for which luminescent activity and stability are reportedly poor.