Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents

Abstract

In this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. The fabricated device shows an on-current of Ion = 2.55 × 10−7 A/µm at Vds = Von = Vgs − Voff = −0.5 V for an Ioff = 1 nA/µm and an average SS of 55 mV/dec over two orders of magnitude of Id. Furthermore, the analog figures of merit have been calculated and show that the transconductance efficiency gm/Id beats the MOSFET performance at low currents.