Abstract
Epitaxial growth of silicon films over the temperature range from 900 to 1300 °C was investigated in a rapid thermal chemical vapour deposition reactor working at atmospheric pressure. The growth of boron doped Si was performed from trichlorosilane and trichloroborine diluted in hydrogen. The epilayers were analysed by Rutherford backscattering spectroscopy, specular reflectance, scanning electron microscopy and Nomarski microscopy. Mechanisms for the observed growth rate are examined, and are tied closely to the degree of surface coverage by Cl. The electrical properties of the deposited films were also checked using the spreading resistance and the four point probe techniques.
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